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| LS350 LS351 LS352 Linear Integrated Systems MONOLITHIC DUAL PNP TRANSISTORS FEATURES HIGH GAIN TIGHT VBE MATCHING HIGH fT hFE 200 @ 10A - 1mA |VBE1-VBE2| = 0.2mV TYP. 275MHz TYP. @ 1mA C1 C2 E1 3 5 E2 ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25C (unless otherwise noted) IC Collector Current 10mA B1 2 6 B2 Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Device Dissipation @ Free Air Linear Derating Factor -65 to +200C +150C ONE SIDE 250mW 2.3mW/C BOTH SIDES 500mW 4.3mW/C 1 C1 B1 E1 E2 B2 7 C2 26 X 29 MILS BOTTOM VIEW ELECTRICAL CHARACTERISTICS @ 25C (unless otherwise noted) SYMBOL CHARACTERISTICS LS350 LS351 LS352 Collector to Base Voltage 25 45 60 BVCBO BVCEO BVEBO BVCCO hFE hFE hFE VCE(SAT) ICBO IEBO COBO CC1C2 IC1C2 fT NF Collector to Emitter Voltage Emitter to Base Voltage Collector to Collector Voltage DC Current Gain DC Current Gain DC Current Gain Collector Saturation Voltage Collector Cutoff Current Emitter Cutoff Current Output Capacitance Collector to Collector Capacitance Collector to Collector Leakage Current Current Gain Bandwidth Product Narrow Band Noise Figure 25 6.2 30 100 100 100 0.5 0.2 0.2 2 2 0.5 200 3 45 6.2 60 150 600 150 600 150 0.5 0.2 0.2 2 2 0.5 200 3 60 6.2 100 200 600 200 600 200 0.5 0.2 0.2 2 2 0.5 200 3 MIN. MIN. MIN. MIN. MIN. MAX. MIN. MAX. MIN. MAX. MAX. MAX. MAX. MAX. MAX. MIN. MAX. UNITS V V V V CONDITIONS IC = 10A IC = 10A IE = 10A IC = 10A IC = 10A IC = 100A IC = 1mA, IE = 0 IB = 0 IC = 0 NOTE 2 IE = 0 VCE= 5V VCE= 5V VCE= 5V IB = 0.1mA VCB = NOTE 3 VEB =3V VCB = 5V V nA nA pF pF nA MHz dB IC = 1mA IE = 0 IC = 0 IE = 0 VCC = 0 VCC = NOTE4 IC = 1mA IC = 100A BW = 200Hz f = 1KHz VCE = 5V VCE = 5V RG = 10 K Linear Integrated Systems 4042 Clipper Court, Fremont, CA 94538 * TEL: (510) 490-9160 * FAX: (510) 353-0261 MATCHING CHARACTERISTICS SYMBOL CHARACTERISTICS Base Emitter Voltage Differential |VBE1-VBE2| |(VBE1-VBE2)|/C |IB1- IB2| |(IB1- IB2)|/C hFE1/hFE2 Base Emitter Voltage Differential Change with Temperature Base Current Differential Base Current Differential Change with Temperature DC Current Gain Differential LS350 1 5 2 20 LS351 0.4 1.0 1 10 5 0.5 LS352 0.2 0.5 0.5 2 5 0.3 TYP. MAX. TYP. MAX. MAX. MAX. UNITS mV mV V/C V/C nA nA/C CONDITIONS IC = 10 A IC= 10 A I = 10A C C VCE = 5V VCE = 5V V V = 5V = 5V TA = -55C to +125C CE CE I = 10 A, I = 10A C TA = -55C to +125C 10 5 5 TYP. % V CE = 5V TO-71 Six Lead 0.195 DIA. 0.175 0.030 MAX. 0.230 DIA. 0.209 0.150 0.115 TO-78 0.305 0.335 0.335 0.370 MAX. 0.040 0.165 0.185 MIN. 0.500 SEATING PLANE 0.200 0.100 2 34 1 5 8 76 P-DIP 0.320 (8.13) 0.290 (7.37) 0.405 (10.29) MAX. C1 B1 E1 N/C 1 2 3 4 8 7 6 5 C2 B2 E2 N/C 0.016 0.019 DIM. A 0.016 0.021 DIM. B 0.029 0.045 6 LEADS 0.019 DIA. 0.016 0.100 0.500 MIN. 0.050 234 1 8 5 6 7 SOIC 0.150 (3.81) 0.158 (4.01) 0.100 45 0.046 0.036 45 0.048 0.028 0.028 0.034 0.188 (4.78) 0.197 (5.00) C1 B1 E1 N/C 1 2 3 4 8 7 6 5 C2 B2 E2 N/C 0.228 (5.79) 0.244 (6.20) NOTES: 1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired. 2. The reverse base-to-emitter voltage must never exceed 6.2 volts; the reverse base-to-emitter current must never exceed 10 A. 3. For LS350: VCB= 20V; for LS351 & LS352: VCB= 30V. 4. For LS351: VCC= 45V; for LS352: VCC= 80V; for LS350: VCC= 25V. Linear Integrated Systems 4042 Clipper Court, Fremont, CA 94538 * TEL: (510) 490-9160 * FAX: (510) 353-0261 |
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